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Título:
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Cathodoluminescence characterization of Ge-doped CdTe crystals
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Autores:
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Pal, U ;
Fernández Sánchez, Paloma ;
Piqueras de Noriega, Javier ;
Sochinskii, N. V. ;
Dieguez, E.
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Inst Physics, 1995-08-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the compensation of V-Cd in CdTe has been investigated. Dependence of the intensity distribution of CL emission bands on the dopant concentration has been studied. Ge doping causes a substantial reduction of the generally referred to 1.40 eV luminescence, which is often present in undoped CdTe crystals, and enhances the 0.91 and 0.81 eV emissions.
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En línea:
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https://eprints.ucm.es/id/eprint/26843/1/PiquerasJ244libre.pdf
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