|
Título:
|
Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method
|
|
Autores:
|
Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
García, S. ;
Martín, J.M. ;
Fernández, M.
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
Elsevier Science SA, 1998-04-01
|
|
Dimensiones:
|
application/pdf
|
|
Nota general:
|
info:eu-repo/semantics/openAccess
|
|
Idiomas:
|
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Electricidad
,
Materia = Ciencias: Física: Electrónica
,
Tipo = Artículo
|
|
Resumen:
|
The influence of the gas flow ratio (R) (O-2/SiH4 and N-2/SiH4) and the deposition temperature on the physical properties of SiOy and SiNx:H thin films deposited by the ECR-CVD method is analyzed. Two deposition regimes limited by R = 1, are found for SiOy films. At R 1, the [O]/[Si] ratio varies between 1.69 and 1.88 and the full width at half maximum of the Si-O stretching peak is almost kept constant at 90 cm(-1). The effect of increasing substrate temperatures is mainly to promote a nearest stoichiometric character of the films. The two deposition regimes described agree with the optical diagnosis of the discharge, that present Si related species in those created at R I. A similar trend is observed for the deposition of SiNx:H films, for which the limiting gas flow ratio is also R = I. At R 1, the composition corresponds to near stoichiometric and N-rich films (x = 0.91-1.49). The main effect of the substrate temperature is to reduce the hydrogen content of the films. Both SiOy and SINx:H films are used in Si-based MIS structures, for those the minimum density of interface states is 3 X 10(11) cm(-2) eV(-1).
|
|
En línea:
|
https://eprints.ucm.es/id/eprint/27056/1/Martil%2C95.pdf
|
