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Título:
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High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors
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Autores:
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San Andres Serrano, Enrique
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Tipo de documento:
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texto impreso
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Editorial:
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Amer Chemical Soc., 2015-01-14
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We present the epitaxial growth of Ge and Ge_(0.94)Sn_(0.06) layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350°C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5nm Al_(2)O_(3), 5nm HfO_(2) or 1nm Al_(2)O_(3)/4nm HfO_(2), on strained Ge and strained Ge_(0.94)Sn_(0.06). Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
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En línea:
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https://eprints.ucm.es/id/eprint/30640/1/SanAndr%C3%A9s%2001%20postprint%20%2B%20embargo.pdf
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