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Título:
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Charge photo-carrier transport from silicon nanocrystals embedded in SiO_2-based multilayer structures
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Autores:
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Rezgui, B. Drid ;
Gourbilleau, F. ;
Maestre Varea, David ;
Palais, O. ;
Sibai, A. ;
Lemiti, M. ;
Bremond, G.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2012-07-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Materia = Ciencias: Física: Física del estado sólido
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Tipo = Artículo
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Resumen:
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Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO_2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by carrier transport through quantum-confined silicon nanocrystals embedded in the SiO_2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which carrier transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix. A photocurrent density J_(ph) of 1-2mA cm^(-2) is extracted from our results. Although this photocurrent density along the ML absorber film is relatively low, the results presented in this work are believed to be a valuable contribution toward the implementation of all-Si tandem solar cells.
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En línea:
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https://eprints.ucm.es/44850/1/MaestreD%2001%20LIBRE.pdf
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